Enhanced binding energy of manganese acceptors close to the GaAs(110) surface-Reference-Cited by-同舟云学术

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Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Published:2010-07-02 Issue:3 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Garleff J. K.,Wijnheijmer A. P.,Silov A. Yu.,van Bree J.,Van Roy W.,Tang J.-M.,Flatté M. E.,Koenraad P. M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.035303/fulltext

Reference27 articles.

1. The Transistor, A Semi-Conductor Triode

2. Where Do the Dopants Go?

3. Ferromagnetism of magnetic semiconductors: Zhang-Rice limit

4. Ferromagnetic semiconductors

5. Many-particle interaction in tunneling spectroscopy of impurity states on the InAs(110) surface

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