Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties-Reference-Cited by-同舟云学术

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Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Published:2004-01 Issue:3 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Strocov, 1 V. N.,Nilsson P. O.,Schmitt T.,Augustsson A.,Gridneva L.,Debowska-Nilsson D.,Claessen R.,Egorov A. Yu.,Ustinov V. M.,Alferov Zh. I.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.035206/fulltext

Reference30 articles.

1. Bulk and interface Al2pcore excitons in GaAs/AlAs/GaAs heterostructures

2. Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN

3. Localization and anticrossing of electron levels inGaAs1−xNxalloys

4. Local structures and interface morphology ofInxGa1−xAs1−yNythin films grown on GaAs

5. Incorporation of nitrogen in GaAsN and InGaAsN alloys investigated by FTIR and NRA

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1. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01

2. Connections between local and macroscopic properties in solids: The case of N in III-V-N alloys;Physical Review B;2014-02-04

3. Electronic structure and band gap of oxygen bearing c-Zr3 N4 and of c-Hf3 N4 by soft X-ray spectroscopy;physica status solidi (a);2013-12-27

4. Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001);Journal of Applied Physics;2008-10-15

5. InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations;Journal of Physics D: Applied Physics;2008-10-14

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