Measurements and atomistic theory of electron g -factor anisotropy for phosphorus donors in strained silicon-Reference-Cited by-同舟云学术

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Measurements and atomistic theory of electron g -factor anisotropy for phosphorus donors in strained silicon

Published:2018-07-26 Issue:3 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Usman M.,Huebl H.,Stegner A. R.,Hill C. D.,Brandt M. S.,Hollenberg L. C. L.

Funder

Australian Research Council

Army Research Office

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.035432/fulltext

Reference40 articles.

1. Silicon quantum electronics

2. A single-atom transistor

3. A silicon-based nuclear spin quantum computer

4. A surface code quantum computer in silicon

5. Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Provably Trainable Rotationally Equivariant Quantum Machine Learning;PRX Quantum;2024-07-31

2. Strain effects in phosphorus bound exciton transitions in silicon;Physical Review Materials;2023-01-31

3. Recent progress in atomistic modelling and simulations of donor spin qubits in silicon;Computational Materials Science;2021-06

4. Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach;Journal of Applied Physics;2019-08-07

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