Selection rules and dispersion of GaAs/AlAs multiple-quantum-well optical phonons studied by Raman scattering in right-angle, forward, and backscattering in-plane geometries-Reference-Cited by-同舟云学术

Selection rules and dispersion of GaAs/AlAs multiple-quantum-well optical phonons studied by Raman scattering in right-angle, forward, and backscattering in-plane geometries

Published:1995-05-15 Issue:20 Volume:51 Page:14448-14458
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fainstein A.,Etchegoin P.,Chamberlain M. P.,Cardona M.,Tötemeyer K.,Eberl K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.14448/fulltext

Reference38 articles.

1. Phonons in semiconductor superlattices

2. Folded, confined, interface, surface, and slab vibrational modes in semiconductor superlattices

3. Phonons in GaAs-AlxGa1−xAs superlattices

4. Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

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