Quantum transport length scales in silicon-based semiconducting nanowires: Surface roughness effects-Reference-Cited by-同舟云学术

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Quantum transport length scales in silicon-based semiconducting nanowires: Surface roughness effects

Published:2008-02-01 Issue:8 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lherbier Aurélien,Persson Martin P.,Niquet Yann-Michel,Triozon François,Roche Stephan

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.085301/fulltext

Reference59 articles.

1. Spin relaxation in InAs nanowires studied by tunable weak antilocalization

2. Coherent Single Charge Transport in Molecular-Scale Silicon Nanowires

3. Tunable Supercurrent Through Semiconductor Nanowires

4. Multiple-gate SOI MOSFETs

5. Small-Diameter Silicon Nanowire Surfaces

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