Evidence for two different bonding mechanisms of Al on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.2417/fulltext
Reference12 articles.
1. Effects of coverage on the geometry and electronic structure of Al overlayers on Si(111)
2. High‐resolution electron energy loss studies of Al and Ge chemisorption on silicon
3. First-principles investigation of geometric and electronic structures of aluminum adsorbed on silicon surfaces
4. Chemisorption of atomic aluminum on Si(111): Evidence for an adsorbate-induced relaxation based onab initiocluster-model calculations
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1. Theoretical Study of Adsorption and Diffusion of Group IIIA Metals on Si(111);The Journal of Physical Chemistry C;2009-07-01
2. Stability, reconstruction, and surface electronic states of group-III atoms on SiC(111);Physical Review B;2001-10-05
3. Migration process of an Al adatom on the Si(111) surface;Surface Science;1999-03
4. A theoretical investigation of adsorbate-induced surface relaxation effects using cluster models: Al on Si(111);Surface Science;1997-05
5. Physical mechanisms responsible for core-level shifts of alkali metals adsorbed on Si(111);Surface Science;1996-08
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