X-ray absorption spectroscopy study of atomic structure of epitaxialErSi1.7(0001)on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.4154/fulltext
Reference20 articles.
1. Fabrication and structure of epitaxial Er silicide films on (111) Si
2. The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)
3. Infrared response of Pt/Si/ErSi1.7heterostructure: Tunable internal photoemission sensor
4. Comparison of the three classes (rare earth, refractory and near-noble) of silicide contacts
5. Epitaxial growth of rare‐earth silicides on (111) Si
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1. High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 × 3) silicide structure on Cu(001);Journal of Applied Physics;2013-08-14
2. Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111);Physical Review B;2005-04-11
3. Submonolayer Er Phases on Si(111);Japanese Journal of Applied Physics;2004-03-10
4. Growth of epitaxial Yb silicide on Si(100) studied by metastable atom deexcitation spectroscopy and photemission;Physical Review B;2002-03-08
5. Growth and Characterization of Erbium Silicides Synthesized by Metal Vapor Vacuum Arc Ion Implantation;MRS Proceedings;2000
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