Comparison of experiment and theory for tunneling in In-Ge: P Schottky-barrier junctions-Reference-Cited by-同舟云学术

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Comparison of experiment and theory for tunneling in In-Ge: P Schottky-barrier junctions

Published:1975-01-15 Issue:2 Volume:11 Page:754-763
ISSN:0556-2805
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Christopher J. E.,Darley H. M.,Lehman G. W.,Tripathi S. N.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.11.754/fulltext

Reference17 articles.

1. Electron and Phonon Tunneling Spectroscopy in Metal-Germanium Contacts

2. One-Electron and Phonon-Assisted Tunneling inn-Ge Schottky Barriers

3. Electron Tunneling in Metal-Semiconductor Barriers

4. Tunnelling in metal-semiconductor contacts. I. Influence of the impurities

5. Influence of Ellipsoidal Energy Surfaces on the Differential Resistance of Schottky Barriers

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band bending and the apparent barrier height in scanning tunneling microscopy;Physical Review B;1989-03-15

2. Strength of Interaction between Tunneling Electrons and Phonons;Journal of the Physical Society of Japan;1984-07

3. Tunneling Spectroscopy in In-SrTiO3-x Contact;Journal of the Physical Society of Japan;1981-08

4. Tunnelling in metal-silicon Schottky barriers and effects of radiation compensation;Journal of Physics C: Solid State Physics;1981-02-28

5. Doping density striation effects in studies of the metal-nonmetal transition in heavily doped semiconductors;Physics Letters A;1979-01

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