Frequency-dependent electron spin resonance study ofPb-type interface defects in thermalSi/SiO2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.165320/fulltext
Reference29 articles.
1. The silicon-silicon dioxide system: Its microstructure and imperfections
2. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbitalPb0defects at the (111) Si/SiO2interface
5. Structural relaxation ofPbdefects at the (111)Si/SiO2interface as a function of oxidation temperature: ThePb-generation–stress relationship
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