Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN-Reference-Cited by-同舟云学术

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Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

Published:2001-03-12 Issue:12 Volume:63 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bayerl M. W.,Brandt M. S.,Ambacher O.,Stutzmann M.,Glaser E. R.,Henry R. L.,Wickenden A. E.,Koleske D. D.,Suski T.,Grzegory I.,Porowski S.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.125203/fulltext

Reference34 articles.

1. Heavy doping effects in Mg-doped GaN

2. Deep level defects in Mg‐doped, p‐type GaN grown by metalorganic chemical vapor deposition

3. Deep level defects in n‐type GaN compensated with Mg

4. Iron Acceptors in Gallium Nitride (GaN)

5. ODMR Studies of MOVPE-Grown GaN Epitaxial Layers

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