Electronic structure of theCaF2/Si(111) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.8880/fulltext
Reference38 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
2. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
3. Surface morphology of epitaxial CaF2films on Si substrates
4. Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces
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