Group-IV and group-V substitutional impurities in cubic group-III nitrides
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.085209/fulltext
Reference51 articles.
1. Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
2. Growth of AlxGa1−xN:Ge on sapphire and silicon substrates
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5. Generation–recombination noise of DX centers in AlN:Si
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