Quantum effects in linear and nonlinear transport ofT-shaped ballistic junction patterned fromGaAs/AlxGa1−xAsheterostructures-Reference-Cited by-同舟云学术

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Quantum effects in linear and nonlinear transport ofT-shaped ballistic junction patterned fromGaAs/AlxGa1−xAsheterostructures

Published:2010-06-24 Issue:23 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wróbel J.,Zagrajek P.,Czapkiewicz M.,Bek M.,Sztenkiel D.,Fronc K.,Hey R.,Ploog K. H.,Bułka B. R.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.233306/fulltext

Reference18 articles.

1. The logical choice for electronics?

2. Nonlinear properties of ballistic nanoelectronic devices

3. T-shaped ballistic spin filter

4. Maximal positive cross-correlation of current noise from Andreev reflection

5. Nonlinear electrical properties of three-terminal junctions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of CdMgTe/Cd(Mn)Te nanostructures with the application of high-resolution electron-beam lithography;Opto-Electronics Review;2017-06

2. Quantum interferential Y-junction switch;Nanotechnology;2012-02-10

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