Excitons bound to isoelectronic Te traps in ZnSe quantum wells: A theoretical study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.8068/fulltext
Reference38 articles.
1. Theory of the Exciton Bound to an Isoelectronic Trap in GaP
2. Theory of the exciton molecule bound to an isoelectronic impurity in GaP
3. Localization of excitons and Anderson transition in ZnSe1-xTex solid solutions
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1. Quantum confinement of Te bound exciton in ZnSe/ZnSe1−xTex and ZnSe/Zn1−yCdySe quantum wells;Materials Chemistry and Physics;2003-07
2. Type-II Zn1−xMnxSe/ZnSe1−yTey quantum wells;Thin Solid Films;2003-04
3. Low-dimensional systems: Quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems;Advances in Physics;2002-03
4. Excitons in CdSe quantum dots;Physical Review B;1997-02-15
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