DX-center transformation of Te donors in GaSb under hydrostatic pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12169/fulltext
Reference34 articles.
1. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
4. Local-vibrational-mode spectroscopy ofDXcenters in Si-doped GaAs under hydrostatic pressure
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DXcenters in GaAs and GaSb;Physical Review B;2005-08-23
2. Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities;Semiconductor Science and Technology;2003-02-10
3. Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb;Journal of Applied Physics;2002-03
4. Shallow to deep transformation of Se donors in GaSb under hydrostatic pressure;Physical Review B;1999-03-15
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