Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.10361/fulltext
Reference25 articles.
1. Poole-Frenkel-assisted emission from deep levels in electron-irradiated germanium
2. Recombination-Generation and Optical Properties of Gold Acceptor in Silicon
3. Characterization of the potential well of a deep-level defect using field dependence of the thermal carrier emission rate
4. Field effect on electron emission from the deep Ti donor level in InP
5. Electric field enhanced electron emission from gold acceptor level and A-centre in silicon
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