Reconstruction energies of partial dislocations in cubic semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.144110/fulltext
Reference39 articles.
1. Sub-Ångstrom high-resolution transmission electron microscopy at 300keV
2. Distortion and Segregation in a Dislocation Core Region at Atomic Resolution
3. Dislocation core studies in empirical silicon models
4. First-Principles Calculations of Dislocations in Semiconductors
5. Structures of dislocations in GaAs and their modification by impurities
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3. Dislocation core energies of the 0° perfect, 60° perfect, 30° partial, and 90° partial dislocations in CdTe, HgTe, and ZnTe: A molecular statics and elasticity theory analysis;Materials Today Communications;2021-03
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