Resonant and bound states of charged defects in two-dimensional semiconductors-Reference-Cited by-同舟云学术

Resonant and bound states of charged defects in two-dimensional semiconductors

Published:2020-02-24 Issue:8 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Aghajanian Martik,Schuler Bruno,Cochrane Katherine A.^ORCID,Lee Jun-Ho^ORCID,Kastl Christoph^ORCID,Neaton Jeffrey B.,Weber-Bargioni Alexander,Mostofi Arash A.^ORCID,Lischner Johannes^ORCID

Funder

Imperial College London

Engineering and Physical Sciences Research Council

Thomas Young Centre

Office of Science

Basic Energy Sciences

U.S. Department of Energy

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Multidisciplinary University Research Initiative

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.081201/fulltext

Reference40 articles.

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5. Shallow Impurity Level Calculations in Semiconductors UsingAb InitioMethods

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