Photoemission study of chemisorption ofC60on InP(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.235331/fulltext
Reference28 articles.
1. The electronic structure of the 3×3R30°–C60/Ge(111) system as measured by angle-resolved photoemission
2. Direct evidence ofC60chemical bonding onSi(100)
3. Photoemission study ofC60/Si(111)adsorption as a function of coverage and annealing temperature
4. C60-terminated Si surfaces: Charge transfer, bonding, and chemical passivation
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2. The Role of Charge−Charge Correlations and Covalent Bonding in the Electronic Structure of Adsorbed C60: C60/Al;The Journal of Physical Chemistry C;2010-10-08
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4. Band alignment at the hybrid heterojunction between S-passivated III–V semiconductors and C60;Journal of Applied Physics;2009-09
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