Thermodynamic origin of the slow free exciton photoluminescence rise in GaAs-Reference-Cited by-同舟云学术

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Thermodynamic origin of the slow free exciton photoluminescence rise in GaAs

Published:2016-02-05 Issue:8 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Beck M.,Hübner J.,Oestreich M.,Bieker S.,Henn T.,Kiessling T.,Ossau W.,Molenkamp L. W.

Funder

Deutsche Forschungsgemeinschaft

European Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.081204/fulltext

Reference39 articles.

1. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

2. Extremely slow energy relaxation of a two-dimensional exciton in a GaAs superlattice structure

3. Dynamics of exciton formation and relaxation in GaAs quantum wells

4. Exciton dynamics in a GaAs quantum well

5. Dynamics of exciton relaxation in GaAs/AlxGa1−xAs quantum wells

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4. Dynamics of exciton–polariton emission in CuI;APL Materials;2021-12-01

5. Exciton-exciton and exciton–charge carrier interaction and exciton collisional broadening in GaAs/AlGaAs quantum wells;Physical Review B;2021-11-09

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