Direct simulation of ion-beam-induced stressing and amorphization of silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.12610/fulltext
Reference14 articles.
1. Stress and plastic flow in silicon during amorphization by ion bombardment
2. Density changes and viscous flow during structural relaxation of amorphous silicon
3. Parallel stress and perpendicular strain depth distributions in [001] silicon amorphized by ion implantation
4. Density of amorphous Si
5. Molecular dynamics with coupling to an external bath
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