Interface excitons in staggered-line-up quantum wells: The AlAs/GaAs case
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.15789/fulltext
Reference23 articles.
1. Applications of Quantum Semiconductor Structures
2. Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation
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4. Image charges in semiconductor quantum wells: Effect on exciton binding energy
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