Thermally activated intersubband and hopping transport in center-dopedp-type GaAs/AlxGa1−xAs quantum wells-Reference-Cited by-同舟云学术

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Thermally activated intersubband and hopping transport in center-dopedp-type GaAs/AlxGa1−xAs quantum wells

Published:1996-01-15 Issue:3 Volume:53 Page:1357-1361
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Buyanov A. V.,Ferreira A. C.,Söderström E.,Buyanova I. A.,Holtz P. O.,Sernelius B.,Monemar B.,Sundaram M.,Campman K.,Merz J. L.,Gossard A. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.1357/fulltext

Reference23 articles.

1. Charged-impurity scattering in GaInAs FETs

2. Ionized-impurity scattering of quasi-two-dimensional quantum-confined carriers

3. High‐differential mobility of hot electrons in delta‐doped quantum wells

4. Applications of Quantum Semiconductor Structures

5. Impurity scattering limited mobility in a quantum well heterojunction

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well;Solid State Communications;2010-07

2. Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition;Journal of Applied Physics;2008-06-15

3. Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition;physica status solidi (b);2008-01

4. Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures;Applied Physics Letters;2005-05-09

5. Manifestation of coulomb gap in two-dimensional p-GaAs-AlGaAs structures with filled upper Hubbard band;Journal of Experimental and Theoretical Physics Letters;2002-09

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