Spin resonance inIn0.53Ga0.47As under hydrostatic pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.13456/fulltext
Reference10 articles.
1. k→·p→perturbation theory in III-V compounds and alloys: a reexamination
2. Electron spin resonance in In0.53Ga0.47As
3. Warping- and inversion-asymmetry-induced cyclotron-harmonic transitions in InSb
4. Interband magnetoabsorption of In_{0.53}Ga_{0.47}As
5. Theoretical and experimental investigation of the effectivegfactor of donor-bound electrons in InSb
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1. Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures;Semiconductors;2015-02
2. Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure;Journal of Applied Physics;2014-07-14
3. GaxIn1–xAs: parameters of k·p models;New Data and Updates for III-V, II-VI and I-VII Compounds;2010
4. GaxIn1–xAs: energy gaps;New Data and Updates for III-V, II-VI and I-VII Compounds;2010
5. GaxIn1–xAs: electron effective mass;New Data and Updates for III-V, II-VI and I-VII Compounds;2010
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