MBE growth and study of strain-compensatedAlzGa1−z−xInxAs/AluGa1−u−vInvAs/InP quantum wells-Reference-Cited by-同舟云学术

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MBE growth and study of strain-compensatedAlzGa1−z−xInxAs/AluGa1−u−vInvAs/InP quantum wells

Published:1995-12-15 Issue:24 Volume:52 Page:R17025-R17027
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hillmer H.,Lösch R.,Schlapp W.,Burkhard H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.R17025/fulltext

Reference2 articles.

1. Photoluminescence and X-ray diffraction studies of MBE-grown compressively strained InGaAs and InGaAlAs quantum wells for 1.55 μm laser diode applications

2. High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology;Applied Physics B;2003-07

2. 4.2.5 References for 4.1 and 4.2;Landolt-Börnstein - Group III Condensed Matter

3. 4.2.4 Other well materials;Landolt-Börnstein - Group III Condensed Matter

4. 4.2.3 InAs and In{1-y}Ga{y}As wells;Landolt-Börnstein - Group III Condensed Matter

5. Quantum Well Detector, Modulator and Switch;Solid-State Science and Technology Library

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