Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily dopedGaAs∕AlxGa1−xAssuperlattices-Reference-Cited by-同舟云学术

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Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily dopedGaAs∕AlxGa1−xAssuperlattices

Published:2004-09-02 Issue:9 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pusep Yu. A.,Guimarães F. E. G.,Ribeiro M. B.,Arakaki H.,de Souza C. A.,Malzer S.,Döhler G. H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.092301/fulltext

Reference10 articles.

1. Superlattice and Negative Differential Conductivity in Semiconductors

2. Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas Superlattices

3. Electronic Properties of Doped Semiconductors

4. Quantum Field Theoretical Methods in Statistical Physics

5. Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas

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1. Localized-to-extended-states transition below the Fermi level;Physical Review B;2018-05-07

2. Determination of mobility edge in presence of metal-to-insulator transition;Superlattices and Microstructures;2017-04

3. Electron and hole scattering in short-period InGaAs/InP superlattices;Journal of Applied Physics;2011-10

4. A study of disorder effects in random (AlxGa1−xAs)n(AlyGa1−yAs)m superlattices embedded in a wide parabolic potential;Applied Physics Letters;2010-03-15

5. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect;Journal of Luminescence;2009-12

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