Zero-phonon line associated with the midgap levelEL2in GaAs: Correlation with theAsGaantisite defect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.8859/fulltext
Reference24 articles.
1. Submillimeter EPR evidence for the As antisite defect in GaAs
2. Electron spin resonance of AsGaantisite defects in fast neutron‐irradiated GaAs
3. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
4. Identification of AsGaantisites in plastically deformed GaAs
5. Identification of AsGaantisite defects in liquid encapsulated Czochralski GaAs
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