Annealing effect on the reduction of Fermi-level density of states in CoTiSb: NMR evidence
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.174202/fulltext
Reference41 articles.
1. Semiconductor-metal transition and the onset of itinerant ferromagnetism in the Heusler phases TiCoSn-TiCoSb
2. Properties on request in semi-Heusler phases
3. Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration
4. Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf)
5. Narrow band in the intermetallic compounds MNiSn (M=Ti, Zr, Hf)
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