Elevated Curie temperature and half-metallicity in the ferromagnetic semiconductorLaxEu1−xO-Reference-Cited by-同舟云学术

Elevated Curie temperature and half-metallicity in the ferromagnetic semiconductorLaxEu1−xO

Published:2015-07-09 Issue:4 Volume:92 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Monteiro Pedro M. S.,Baker Peter J.,Hine Nicholas D. M.,Steinke Nina-J.,Ionescu Adrian,Cooper Joshaniel F. K.,Barnes Crispin H. W.,Kinane Christian J.,Salman Zaher,Wildes Andrew R.,Prokscha Thomas,Langridge Sean

Funder

Engineering and Physical Sciences Research Council

Fundação para a Ciência e a Tecnologia

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.92.045202/fulltext

Reference29 articles.

1. Dilute ferromagnetic semiconductors: Physics and spintronic structures

2. Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN

3. Spatially homogeneous ferromagnetism of (Ga, Mn)As

4. Neutron scattering from the Heisenberg ferromagnets EuO and EuS. I. The exchange interactions

5. Spatially Homogeneous Ferromagnetism below the Enhanced Curie Temperature inEuO1−xThin Films

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