Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-dopedGaAs/AlxGa1−xAssingle quantum wells at high magnetic fields-Reference-Cited by-同舟云学术

Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-dopedGaAs/AlxGa1−xAssingle quantum wells at high magnetic fields

Published:2001-09-28 Issue:16 Volume:64 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wang Y. J.,Leem Y. A.,McCombe B. D.,Wu X.-G.,Peeters F. M.,Jones E. D.,Reno J. R.,Lee X. Y.,Jiang H. W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.161303/fulltext

Reference25 articles.

1. Polaron effective mass in GaAs heterostructure

2. Cyclotron resonance of polarons confined to a surface

3. Energy levels of two- and three-dimensional polarons in a magnetic field

4. Screening of polar interaction in quasi-two-dimensional semiconductor microstructures

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