Pressure-driven valence increase and metallization in the Kondo insulator Ce3Bi4Pt3-Reference-Cited by-同舟云学术

Pressure-driven valence increase and metallization in the Kondo insulator Ce3Bi4Pt3

Published:2019-12-23 Issue:23 Volume:100 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Campbell Daniel J.^ORCID,Brubaker Zachary E.,Roncaioli Connor,Saraf Prathum^ORCID,Xiao Yuming,Chow Paul,Kenney-Benson Curtis,Popov Dmitry,Zieve Rena J.^ORCID,Jeffries Jason R.,Paglione Johnpierre^ORCID

Funder

Laboratory Directed Research and Development

Lawrence Livermore National Laboratory

U.S. Department of Energy

Office of Science

Workforce Development for Teachers and Scientists

Oak Ridge Institute for Science and Education

Air Force Office of Scientific Research

National Science Foundation

Gordon and Betty Moore Foundation

Argonne National Laboratory

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.235133/fulltext

Reference53 articles.

1. Kondo-hole conduction in the La-doped Kondo insulatorCe3Bi4Pt3

2. Gap in the magnetic excitation spectrum ofCe3Bi4Pt3

3. Low-temperature conducting state in two candidate topological Kondo insulators:SmB6andCe3Bi4Pt3

4. Topological Kondo Insulators

5. Magnetoresistance of the Kondo insulator Ce3Bi4Pt3

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