Many-body effects in highly acceptor-dopedGaAs/AlxGa1−xAsquantum wells-Reference-Cited by-同舟云学术

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Many-body effects in highly acceptor-dopedGaAs/AlxGa1−xAsquantum wells

Published:1998-08-15 Issue:8 Volume:58 Page:4624-4628
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Holtz P. O.,Ferreira A. C.,Sernelius B. E.,Buyanov A.,Monemar B.,Mauritz O.,Ekenberg U.,Sundaram M.,Campman K.,Merz J. L.,Gossard A. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.4624/fulltext

Reference15 articles.

1. Excitons in the quasi-two-dimensional electron gas

2. Low-temperature absorption spectrum in GaAs in the presence of optical pumping

3. Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1−xAs quantum wells from below to above the metallic limit

4. Linear and nonlinear optical properties of semiconductor quantum wells

5. Subbands and Landau levels in the two-dimensional hole gas at the GaAs-AlxGa1−xAs interface

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1. Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation;Physical Review B;2016-08-25

2. Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime;Physical Review B;2009-11-18

3. Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition;Journal of Applied Physics;2008-06-15

4. Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition;physica status solidi (b);2008-01

5. Anharmonicity and asymmetry of Landau levels for a disordered two-dimensional electron gas;Physical Review B;2006-12-06

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