Electronic band structure and nonparabolicity in strained-layer Si-Si1−xGexsuperlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.8397/fulltext
Reference13 articles.
1. Strain-induced confinement inSi0.75Ge0.25(Si/Si0.5Ge0.5) (001) superlattice systems
2. Strain-induced electron states in Si0.75Ge0.25(Si/Si0.5Ge0.5)(001) superlattices
3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
4. Momentum-mixing-induced enhancement of band nonparabolicity in GaAs-Ga1−xAlxAssuperlattices
5. Strain-induced conduction-band nonparabolicity of GaAs-GaAs1−xPxsuperlattices
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