Electron-energy-loss spectroscopy study of the adsorption of aluminum on the silicon (111) 7 × 7 surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.15.959/fulltext
Reference10 articles.
1. Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAs
2. Surface reactions of silicon with aluminum and with indium
3. The effects of preadsorbed oxygen contaminant on the adsorption of Al on Si (111)
4. Electron Energy-Loss Spectroscopy of GaAs and Ge Surfaces
5. Thickness measurements of adsorbed layers by auger electron spectroscopy
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2. Electron-stimulated desorption from the surface of alumina ceramics;Bulletin of the Russian Academy of Sciences: Physics;2008-08
3. Growth and structure of aluminum films on (001) silicon carbide;Journal of Applied Physics;1988-05-15
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