Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.13629/fulltext
Reference55 articles.
1. Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
2. High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films
3. High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method
4. Diamond MESFET using ultrashallow RTP boron doping
5. Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond Film
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