Hydrostatic-pressure determination of tensile-strainedGaxIn1−xP-(AlyGa1−y)0.52In0.48P quantum-well band offsets-Reference-Cited by-同舟云学术

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Hydrostatic-pressure determination of tensile-strainedGaxIn1−xP-(AlyGa1−y)0.52In0.48P quantum-well band offsets

Published:1996-04-15 Issue:16 Volume:53 Page:10830-10836
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kowalski O. P.,Cockburn J. W.,Mowbray D. J.,Skolnick M. S.,Dawson M. D.,Duggan G.,Kean A. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.10830/fulltext

Reference31 articles.

1. High performance AlGaInP visible light‐emitting diodes

2. High‐power 630–640 nm GaInP/GaAlInP laser diodes

3. Electrically injected visible (639–661 nm) vertical cavity surface emitting lasers

4. Band-structure engineering for low-threshold high-efficiency semiconductor lasers

5. Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode;physica status solidi (c);2009-06

2. Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells;Acta Physica Sinica;2003

3. Ordering parameter and band-offset determination for orderedGaxIn1−xP/(Al0.66Ga0.34)yIn1−yPquantum wells;Physical Review B;2002-07-10

4. Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells;Japanese Journal of Applied Physics;1998-01-15

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