Spectroscopic evidence of the dissymmetry of direct and inverted interfaces in GaAs/AlAs type-II superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.3955/fulltext
Reference29 articles.
1. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
2. Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection
3. Atomic scale survey of III–V epitaxial interfaces
4. Cross‐sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure
5. Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice
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