Funder
National Science Foundation
U.S. Department of Energy
Argonne National Laboratory
University of Minnesota
Publisher
American Physical Society (APS)
Cited by
8 articles.
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1. The A-Ni chemical bond in AIIINiSb (AIII=Sc, Y, Er) half-Heusler materials triggers the formation of anomalous vacancy defects;Materials Today Physics;2024-08
2. Bonding properties of Rubik's-cube-like Slater-Pauling Heusler semiconductors for thermoelectrics;Physical Review B;2023-11-15
3. Optoelectronic and thermoelectronic properties of 3d, 4d, and 5d based semiconductor half-Heuslers (Ni/Pd/Pt)ScSb with narrow bandgap;Computational Condensed Matter;2023-09
4. A Comprehensive GGA Investigation on the Structural, Elastic, Electronic, and Magnetic Properties of Vanadium-Based Half-Heusler XVZ (X = Cr, Mn, Fe; Z = Sn, Sb) Compounds;Journal of Electronic Materials;2023-04-25
5. Ab initio
calculation of the Hubbard
U
and Hund exchange
J
in local moment magnets: The case of Mn-based full Heusler compounds;Physical Review Materials;2022-11-02