Local recombination mechanisms in type-II GaAs/AlAs superlattices: The role of temperature-dependent transport processes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.15862/fulltext
Reference16 articles.
1. Nature of the lowest confined electron state in GaAs/AlAs type II quantum wells as a function of AlAs thickness
2. Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells
3. Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures
4. Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure
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