Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories-Reference-Cited by-同舟云学术

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Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories

Published:2012-09-18 Issue:10 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Schulman A.,Rozenberg M. J.,Acha C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.104426/fulltext

Reference18 articles.

1. Overview of candidate device technologies for storage-class memory

2. Flash memories: Successes and challenges

3. Nanoionics-based resistive switching memories

4. Resistive switching in transition metal oxides

5. Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides

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