Interface alloying effects on the LO and TO phonons in Si/Ge superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.7886/fulltext
Reference21 articles.
1. Raman study of order and disorder in SiGe ultrathin superlattices
2. Raman spectra of SinGemsuperlattices: Theory and experiment
3. Structural stability of short-period Si/Ge superlattices studied with Raman spectroscopy
4. In-plane Raman scattering of (001)-Si/Ge superlattices: Theory and experiment
5. Calculated phonon spectra of Si/Ge (001) superlattices: Features for interface characterization
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1. Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs.ab initiocalculations;Journal of Applied Physics;2017-02-28
2. GeSi Raman spectra vs. local clustering/anticlustering: Percolation scheme and ab initio calculations;Journal of Applied Physics;2013-07-21
3. Effect of Interface Structure on Thermal Boundary Conductance by using First-principles Density Functional Perturbation Theory;Chinese Physics Letters;2011-11
4. One- and two-phonon Raman scattering from hydrogenated nanocrystalline silicon films;Vacuum;2007-02
5. Vibrational properties of SiGe superlattices;Progress in Surface Science;1997-01
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