Si(001)/B surface reconstruction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.13700/fulltext
Reference37 articles.
1. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
2. Surface doping and stabilization of Si(111) with boron
3. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
4. Electronic states due to surface doping: Si(111)√3×√3B
5. Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffraction
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1. Structural and electronic properties of boron-induced defects on the Si(001) surface;Physical Review B;2019-10-04
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3. Atomic structures of boron-induced protrusion features on Si(100) surfaces;Physical Review B;2008-01-17
4. A Chemical Mechanism for Determining the Influence of Boron on Silicon Epitaxial Growth;Japanese Journal of Applied Physics;2001-11-15
5. Adsorption of water on single and double layer stepped Si(100) surfaces;SURF REV LETT;2001
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