Electronic properties of epitaxial La1−xSrxRhO3 thin films-Reference-Cited by-同舟云学术

Electronic properties of epitaxial La1−xSrxRhO3 thin films

Published:2021-05-25 Issue:19 Volume:103 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jiang Juan,Lee Alex Taekyung,Lee Sangjae,Lau Claudia,Li Min,Pedersen Tor M.^ORCID,Liu Chong^ORCID,Gorovikov Sergey,Zhdanovich Sergey^ORCID,Damascelli Andrea^ORCID,Zou Ke,Walker Frederick J.,Ismail-Beigi Sohrab,Ahn Charles H.

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

National Science Foundation

Canada Foundation for Innovation

Natural Sciences and Engineering Research Council of Canada

National Research Council Canada

Canadian Institutes of Health Research

University of Saskatchewan

Canada First Research Excellence Fund

University of British Columbia

Canadian Institute for Advanced Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.195153/fulltext

Reference28 articles.

1. Metal-insulator transitions

2. Structural and metal-insulator transitions in rhenium-based double perovskites via orbital ordering

3. Absence of Diffusion in Certain Random Lattices

4. Anderson transitions

5. Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions

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