Effect of subband mixing on the energy levels of a hydrogenic impurity in a GaAs/Ga1−xAlxAs double quantum well in a magnetic field
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.11166/fulltext
Reference18 articles.
1. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
2. Resonant tunneling through quantum wells at frequencies up to 2.5 THz
3. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
4. High‐detectivityD*=1.0×1010cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
5. Resonant tunneling transistor with quantum well base and high‐energy injection: A new negative differential resistance device
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1. Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility;AIP Conference Proceedings;2015
2. BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS;Modern Physics Letters B;2012-09-11
3. Hydrogenic-donor impurity states in coupled quantum disks in the presence of a magnetic field;Journal of Applied Physics;2007-08
4. Metal–insulator transition in a semimagnetic parabolic quantum well;Physica E: Low-dimensional Systems and Nanostructures;2007-01
5. Metal-insulator transition in a quantum well under the influence of magnetic field;PHYSICA E;2006
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