Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.024107/fulltext
Reference17 articles.
1. Characterization of diffusion length degradation in Czochralski silicon solar cells
2. Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon
3. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
4. Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data
5. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
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