R-matrix theory for magnetotransport properties in semiconductor devices-Reference-Cited by-同舟云学术

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R-matrix theory for magnetotransport properties in semiconductor devices

Published:2006-12-06 Issue:23 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jayasekera Thushari,Morrison Michael A.,Mullen Kieran

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.235308/fulltext

Reference15 articles.

1. Curved quantum waveguides in uniform magnetic fields

2. Quantum Hall Resistance in the Quasi-One-Dimensional Electron Gas

3. High-mobility electron systems in remotely-doped InSb quantum wells

4. Effect of temperature on ballistic transport in InSb quantum wells

5. Bend-resistance characteristics of macroscopic four-terminal devices with a high electron mobility

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1. A One-Dimensional Effective Model for Nanotransistors in Landauer–Büttiker Formalism;Micromachines;2020-03-30

2. Conductance oscillations of core-shell nanowires in transversal magnetic fields;Physical Review B;2016-05-31

3. R-Matrix Theory for Nanoscale Phonon Thermal Transport across Devices and Interfaces;Numerical Heat Transfer, Part B: Fundamentals;2011-10

4. Application of the R-matrix method in quantum transport simulations;Journal of Computational Electronics;2011-01-21

5. Electron Interactions in Solids;R-Matrix Theory of Atomic Collisions;2010-11-30

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