Observation of planar oscillations of MeV protons in silicon using ion channeling patterns-Reference-Cited by-同舟云学术

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Observation of planar oscillations of MeV protons in silicon using ion channeling patterns

Published:1996-04-01 Issue:13 Volume:53 Page:8267-8276
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Breese M. B. H.,King P. J. C.,Grime G. W.,Smulders P. J. M.,Seiberling L. E.,Boshart M. A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.8267/fulltext

Reference37 articles.

1. Multiple Scattering and Planar Dechanneling in Silicon and Germanium

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The topological origin of the shape stability observed in angular distributions of the axially channeled protons;Chaos, Solitons & Fractals;2024-09

2. Superfocusing and zero-degree focusing in planar channeling of protons in a thin silicon crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-04

3. Experimental evidence of the superfocusing effect for axially channeled MeV protons;Physical Review B;2016-08-11

4. Planar channeling and quasichanneling oscillations in a bent crystal;The European Physical Journal C;2016-02

5. CRYSTAL simulation code and modeling of coherent effects in a bent crystal at the LHC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-07

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