First-principles hyperfine tensors for electrons and holes in GaAs and silicon-Reference-Cited by-同舟云学术

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First-principles hyperfine tensors for electrons and holes in GaAs and silicon

Published:2020-03-04 Issue:11 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Philippopoulos Pericles^ORCID,Chesi Stefano^ORCID,Coish W. A.^ORCID

Funder

Natural Sciences and Engineering Research Council of Canada

Canadian Institute for Advanced Research

Fonds de Recherche du Québec - Nature et Technologies

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.115302/fulltext

Reference96 articles.

1. Prospects for Spin-Based Quantum Computing in Quantum Dots

2. Spin-Based Quantum Dot Quantum Computing in Silicon

3. Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors

4. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated

5. Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well

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