Erratum: Analytic many-body potential forInAs∕GaAssurfaces and nanostructures: Formation energy of InAs quantum dots [Phys. Rev. B77, 235303 (2008)]
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.159905/fulltext
Reference9 articles.
1. A semi-empirical many-body interatomic potential for modelling dynamical processes in gallium arsenide
2. Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes
3. Molecular dynamics simulations of implantation damage and recovery in semiconductors
4. Strain-induced Kirkendall mixing at semiconductor interfaces
5. Modeling of compound semiconductors: Analytical bond-order potential for Ga, As, and GaAs
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