Electroreflectance intensity for resonant coupling between Wannier-Stark localization states in a GaAs/AlAs superlattice
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.7656/fulltext
Reference28 articles.
1. Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field
2. Observation of the Wannier-Stark Quantization in a Semiconductor Superlattice
3. Doubly resonant raman scattering induced by an electric field
4. Room-Temperature Observation of Stark Ladder Formation in a Short-Period GaAs/AlAs Superlattice under an Electric Field
5. Electron minibands and Wannier-Stark quantization in anIn0.15Ga0.85As-GaAs strained-layer superlattice
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1. Electric field effects on excitonic quantum beats in a single quantum well embedded in a GaAs/AlAs superlattice;PHYS REV B;2011
2. Upconversion of photoluminescence due to subband resonances in a GaAs/AlAs multiple quantum well structure;Physica E: Low-dimensional Systems and Nanostructures;2010-09
3. Enhanced terahertz emission from coherent longitudinal optical phonons in a quantum well structure under applied bias;Applied Physics Letters;2009-04-27
4. Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films;Applied Physics Express;2008-11-14
5. Bistability operation of photocurrent due to wave-function coupling of Wannier-Stark localization states in a GaAs/AlAs superlattice;physica status solidi (c);2008-07
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